Advanced Characterization Techniques for Thin Film Solar by Daniel Abou-Ras, Thomas Kirchartz, Uwe Rau

By Daniel Abou-Ras, Thomas Kirchartz, Uwe Rau

Written by means of scientists from top institutes in Germany, united states and Spain who use those recommendations because the middle in their medical paintings and who've an actual inspiration of what's proper for photovoltaic units, this article includes concise and accomplished lecture-like chapters on particular examine methods.They specialize in rising, really good recommendations which are new to the sphere of photovoltaics but have a confirmed relevance. even though, because new tools must be judged in keeping with their implications for photovoltaic units, a transparent introductory bankruptcy describes the elemental physics of thin-film sun cells and modules, delivering a consultant to the categorical merits which are provided via every one person method.The selection of matters is a consultant cross-section of these tools having fun with a excessive measure of visibility in fresh clinical literature. additionally, they care for particular device-related subject matters and comprise a variety of fabric and surface/interface research tools that experience lately confirmed their relevance. ultimately, simulation strategies are awarded which are used for ab-initio calculations of correct semiconductors and for equipment simulations in 1D and 2D.For scholars in physics, strong kingdom physicists, fabrics scientists, PhD scholars in fabric sciences, fabrics institutes, semiconductor physicists, and people operating within the semiconductor undefined, in addition to being compatible as supplementary analyzing in comparable classes.

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In case of radiative recombination (a), the excess energy of the recombining electron–hole pair is transferred to a photon. In case of (b) Auger recombination [15, 16], the excess energy serves to accelerate a third charge carrier (electron or hole), which thermalizes rapidly by emitting phonons. The third recombination mechanism is Shockley–Read–Hall recombination via states in the forbidden gap. Here, the excess energy is also transferred to phonons leading to an increase in the lattice temperature of the absorber.

Now it is obvious that for zero excess illumination and zero volts applied, the current becomes zero. 2 shows the current density/voltage ( J/V) curves of an ideal solar cell according to Eq. 0 eV. If we evaluate Eq. 2. This voltage is called the open-circuit voltageVoc and follows from Eq. 4) as 01 Ð Voc ¼ kT B BEg lnB Ð q @1 Eg wsun ðEÞdE wbb ðEÞdE 1  C kT J sc;SQ C þ1 þ 1C ¼ ln A J0;SQ q ð1:5Þ Here, J0,SQ is the saturation current density in the SQ limit, that is, the smallest possible saturation current density for a semiconductor of a given band gap.

This effect is relatively pronounced in this simulation since the complete thickness of the absorber is rather thin (500 nm) and the surface recombination velocity is assumed to be rather high (S ¼ 105 cm/s). 6). Thus, the p–n-junctions solar cell is relatively sensitive to the lack of selectivity of the back contact, that is, to surface recombination. 7a). However, the fill factor decreases because of the reduced capability of the device to collect all charge carriers when under forward voltage bias the built-in field is reduced (cf.

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